International Teaching | NANOELECTRONICS

cod. 0522600055

NANOELECTRONICS

	0522600055
	DEPARTMENT OF PHYSICS "E. R. CAIANIELLO"
	EQF7
	PHYSICS
	2024/2025

PERCORSO SHARED STUDY PATHWAY

	YEAR OF COURSE 2
	YEAR OF DIDACTIC SYSTEM 2021
	AUTUMN SEMESTER

TEACHING UNITS

SSD	CFU	HOURS	ACTIVITY	TYPE OF ACTIVITY
FIS/01	5	40	LESSONS	SUPPLEMENTARY COMPULSORY SUBJECTS
FIS/01	1	12	LAB	SUPPLEMENTARY COMPULSORY SUBJECTS

	Objectives
	THE COURSE AIMS TO PROVIDE AN IN-DEPTH KNOWLEDGE OF THE PHYSICS AND TECHNOLOGY OF MODERN SEMICONDUCTOR ELECTRONIC DEVICES, PARTICULARLY THOSE WITH NANOMETRIC DIMENSIONS. KNOWLEDGE AND UNDERSTANDING: THE COURSE CONSTITUTES AN IN-DEPTH ANALYSIS OF THE ELECTRONIC, OPTOELECTRONIC AND TRANSPORT PROPERTIES OF SEMICONDUCTOR MATERIALS; IT DEALS IN AN EXTENSIVE MANNER THE MANUFACTURE, CHARACTERIZATION AND OPERATION OF DIODES, TRANSISTORS AND MEMORIES; FOCUSES ON ELECTROSTATIC AND SEMICLASSIC AND QUANTUM TRANSPORT PHENOMENA IN MODERN NANOTRANSISTORS; MENTIONS THE TRANSPORT PROPERTIES OF ONE- AND TWO-DIMENSIONAL NANO-STRUCTURED MATERIALS (NANOWIRE, NANOTUBE, GRAPHENE AND OTHER 2D MATERIALS); IT EXTENDS TO MICROWAVE DEVICES AND PHOTONIC DEVICES (PHOTOR DETECTORS, LASERS AND PHOTOVOLTAIC CELLS). STUDENTS ARE MADE AWARE OF THE TECHNOLOGICAL AND CONCEPTUAL CHALLENGES PRESENTED BY THE CONTINUOUS MINIATURIZATION OF ELECTRONIC DEVICES AND TRENDS IN MODERN NANOELECTRONICS. THE COURSE MAY INCLUDE A LABORATORY PART IN WHICH CUTTING-EDGE TECHNIQUES AND TOOLS ARE USED TO CARRY OUT ELECTRO-OPTICAL CHARACTERIZATIONS OF DEVICES. ABILITY TO APPLY KNOWLEDGE AND UNDERSTANDING: WITH THIS COURSE THE STUDENT WILL ACQUIRE THEORETICAL AND PRACTICAL KNOWLEDGE USEFUL FOR CARRYING OUT RESEARCH ACTIVITIES IN A MICRO AND/OR NANOELECTRONICS LABORATORY AND FOR UNDERTAKING WORK IN THE SEMICONDUCTOR INDUSTRY. THE STUDENT WILL CONSTANTLY USE THE ENERGY BAND MODEL TO UNDERSTAND THE ELECTRICAL BEHAVIOR OF DEVICES AND WILL ACQUIRE FAMILIARITY WITH THE MOST USED THEORETICAL APPROACHES FOR ELECTRICAL TRANSPORT AT THE NANOSCALE. THE STUDENT WILL BE ABLE TO UNDERSTAND THE SPECIALIST SCIENTIFIC LITERATURE OF THE SECTOR. INDEPENDENCE OF JUDGMENT THE STUDENT WILL BE ABLE TO IDENTIFY THE MOST APPROPRIATE PARAMETERS AND METHODS FOR THE CHARACTERIZATION OF AN ELECTRONIC DEVICE. THE STUDENT WILL ALSO BE ABLE TO USE THE BAND MODEL TO DESCRIBE THE OPTOELECTRONIC PHENOMENA THAT OCCUR IN DIODES AND TRANSISTORS AT THE MICRO-AND NANO-SCALE. WILL BE ABLE TO JUDGE THE PLAUSIBILITY AND ACCURACY OF MODELS PROPOSED TO EXPLAIN EXPERIMENTAL OBSERVATIONS. COMMUNICATION SKILLS THE STUDENT WILL BE ABLE TO EXPLAIN IN A CLEAR WAY AND WITH PROPER LANGUAGE THE OPERATION OF AN ELECTRONIC DEVICE AND THE PHYSICAL PHENOMENA THAT ARE UNDERLYING IT. LEARNING ABILITY THE STUDENT WILL BE ABLE TO APPLY THE KNOWLEDGE ACQUIRED TO UNDERSTAND THE OPERATION OF OPTOELECTRONIC DEVICES NOT PRESENTED DURING THE COURSE. ALSO, YOU WILL BE ABLE TO EVALUATE OR PROPOSE MODELS TO EXPLAIN NEW EXPERIMENTAL OBSERVATIONS.

THE COURSE AIMS TO PROVIDE AN IN-DEPTH KNOWLEDGE OF THE PHYSICS AND TECHNOLOGY OF MODERN SEMICONDUCTOR ELECTRONIC DEVICES, PARTICULARLY THOSE WITH NANOMETRIC DIMENSIONS.

KNOWLEDGE AND UNDERSTANDING:
THE COURSE CONSTITUTES AN IN-DEPTH ANALYSIS OF THE ELECTRONIC, OPTOELECTRONIC AND TRANSPORT PROPERTIES OF SEMICONDUCTOR MATERIALS; IT DEALS IN AN EXTENSIVE MANNER THE MANUFACTURE, CHARACTERIZATION AND OPERATION OF DIODES, TRANSISTORS AND MEMORIES; FOCUSES ON ELECTROSTATIC AND SEMICLASSIC AND QUANTUM TRANSPORT PHENOMENA IN MODERN NANOTRANSISTORS; MENTIONS THE TRANSPORT PROPERTIES OF ONE- AND TWO-DIMENSIONAL NANO-STRUCTURED MATERIALS (NANOWIRE, NANOTUBE, GRAPHENE AND OTHER 2D MATERIALS); IT EXTENDS TO MICROWAVE DEVICES AND PHOTONIC DEVICES (PHOTOR DETECTORS, LASERS AND PHOTOVOLTAIC CELLS). STUDENTS ARE MADE AWARE OF THE TECHNOLOGICAL AND CONCEPTUAL CHALLENGES PRESENTED BY THE CONTINUOUS MINIATURIZATION OF ELECTRONIC DEVICES AND TRENDS IN MODERN NANOELECTRONICS. THE COURSE MAY INCLUDE A LABORATORY PART IN WHICH CUTTING-EDGE TECHNIQUES AND TOOLS ARE USED TO CARRY OUT ELECTRO-OPTICAL CHARACTERIZATIONS OF DEVICES.

ABILITY TO APPLY KNOWLEDGE AND UNDERSTANDING:
WITH THIS COURSE THE STUDENT WILL ACQUIRE THEORETICAL AND PRACTICAL KNOWLEDGE USEFUL FOR CARRYING OUT RESEARCH ACTIVITIES IN A MICRO AND/OR NANOELECTRONICS LABORATORY AND FOR UNDERTAKING WORK IN THE SEMICONDUCTOR INDUSTRY. THE STUDENT WILL CONSTANTLY USE THE ENERGY BAND MODEL TO UNDERSTAND THE ELECTRICAL BEHAVIOR OF DEVICES AND WILL ACQUIRE FAMILIARITY WITH THE MOST USED THEORETICAL APPROACHES FOR ELECTRICAL TRANSPORT AT THE NANOSCALE. THE STUDENT WILL BE ABLE TO UNDERSTAND THE SPECIALIST SCIENTIFIC LITERATURE OF THE SECTOR.

INDEPENDENCE OF JUDGMENT
THE STUDENT WILL BE ABLE TO IDENTIFY THE MOST APPROPRIATE PARAMETERS AND METHODS FOR THE CHARACTERIZATION OF AN ELECTRONIC DEVICE. THE STUDENT WILL ALSO BE ABLE TO USE THE BAND MODEL TO DESCRIBE THE OPTOELECTRONIC PHENOMENA THAT OCCUR IN DIODES AND TRANSISTORS AT THE MICRO-AND NANO-SCALE. WILL BE ABLE TO JUDGE THE PLAUSIBILITY AND ACCURACY OF MODELS PROPOSED TO EXPLAIN EXPERIMENTAL OBSERVATIONS.

COMMUNICATION SKILLS
THE STUDENT WILL BE ABLE TO EXPLAIN IN A CLEAR WAY AND WITH PROPER LANGUAGE THE OPERATION OF AN ELECTRONIC DEVICE AND THE PHYSICAL PHENOMENA THAT ARE UNDERLYING IT.

LEARNING ABILITY
THE STUDENT WILL BE ABLE TO APPLY THE KNOWLEDGE ACQUIRED TO UNDERSTAND THE OPERATION OF OPTOELECTRONIC DEVICES NOT PRESENTED DURING THE COURSE. ALSO, YOU WILL BE ABLE TO EVALUATE OR PROPOSE MODELS TO EXPLAIN NEW EXPERIMENTAL OBSERVATIONS.

	Prerequisites
	THE PREREQUISITE FOR THE COURSE IS THE KNOWLEDGE OF GENERAL PHYSICS (MECHANICS AND ELECTROMAGNETISM) AND CALCULUS. FUNDAMENTALS OF QUANTUM MECHANICS AND CONDENSED MATTER PHYSICS ARE ALSO REQUIRED.

	Contents
	LECTURES AND LABORATORY (52H): ENERGY BANDS AND CHARGE CARRIERS AT THERMAL EQUILIBRIUM (5H) SEMICONDUCTOR MATERIALS. BASIC CRYSTAL STRUCTURES. ENERGY BANDS. DONORS AND ACCEPTORS. DOPING AT NANOSCALE. DEGENERATE DOPING. ALTERNATIVES TO IMPURITY DOPING. FERMI FUNCTION. DENSITY OF STATES. CHARGE CARRIER CONCENTRATION. CURRENT FLOW (6H) CLASSICAL TRANSPORT. DRIFT AND DIFFUSION. SCATTERING MECHANISMS. BOLTZMANN TRANSPORT EQUATION. GENERATION AND RECOMBINATION. CONTINUITY EQUATION. TUNNELING. FIELD EMISSION. HIGH-FIELD EFFECTS. QUANTUM TRANSPORT. LANDAUER FORMALISM. MULTIMODE TRANSPORT. QUANTUM CONDUCTANCE. EFFECT OF SCATTERING. LOW DIMENSIONAL SEMICONDUCTORS (2H) GRAPHENE AND TWO-DIMENSIONAL COMPOUND SEMICONDUCTORS. NANOWIRES. CARBON NANOTUBES. QUANTUM DOTS. STRUCTURAL PROPERTIES. BAND STRUCTURES. ELECTRICAL AND OPTICAL PROPERTIES. EXCITONS. VAN-DER-WAALS HETEROSTRUCTURES. HETEROJUNCTIONS (5H) METAL-SEMICONDUCTOR CONTACTS. SCHOTTKY BARRIER. FERMI LEVEL PINNING. FERMI-LEVEL DEPINNING. CURRENT TRANSPORT PROCESSES. THERMIONIC-EMISSION THEORY. OHMIC CONTACTS. TRANSFER LENGTH OF CONTACTS. HETEROJUNCTIONS. HETEROEPITAXY. ENERGY LEVELS IN HETEROSTRUCTURES. SUPERLATTICES. MOS STRUCTURE (4H) METAL-OXIDE-SEMICONDUCTOR CAPACITOR. DEPLETION CAPACITANCE. INTERFACE-STATES CAPACITANCE. DENSITY-OF-STATES OR QUANTUM CAPACITANCE. ACCUMULATION CAPACITANCE. THRESHOLD VOLTAGE. C-V CHARACTERISTICS. QUANTUM EFFECTS ON THE MOS C-V CHARACTERISTICS. MOS FIELD-EFFECT TRANSISTOR (6H) OPERATION PRINCIPLES—GRADUAL CHANNEL APPROXIMATION. NANOSCALE TRANSISTORS WITH BALLISTIC TRANSPORT. MOSFETS. TOP-OF-THE-BARRIER MODEL. OFF-STATE. ON-STATE. IMPACT OF SCATTERING. MOSFET PERFORMANCE. ELECTROSTATICS. SCALING AND SHORT-CHANNEL EFFECTS. ULTRATHIN-BODY FIELD-EFFECT TRANSISTORS. DOUBLE-GATE FINFETS. MULTIGATE NANOSHEET AND NANOWIRE FETS. TUNNELING THROUGH THE GATE DIELECTRIC. DIRECT SOURCE-TO-DRAIN TUNNELING. CMOS CIRCUITS AND MEMORIES (2H) COMPLEMENTARY MOSFET (CMOS) CIRCUITS. STATIC AND DYNAMIC RANDOM ACCESS MEMORIES (SRAM AND DRAM). NONVOLATILE MEMORY DEVICES. RESISTIVE RANDOM ACCESS MEMORIES (RRAM). METAL-SOURCE-DRAIN FIELD-EFFECT TRANSISTORS (3H) OPERATING PRINCIPLES OF SB-MOSFETS. ULTRATHIN-BODY SB-MOSFETS. OUTPUT CHARACTERISTICS. SCHOTTKY-BARRIER LOWERING WITH DOPANT SEGREGATION. TEMPERATURE DEPENDENCE. INTERFACE ENGINEERING WITH DEPINNING LAYERS. RECONFIGURABLE DEVICES. PROGRAM-GATE AT DRAIN VERSUS PROGRAM-GATE AT SOURCE. STEEP SLOPE TRANSISTORS (2H) BAND-TO-BAND TUNNEL FIELD-EFFECT TRANSISTORS. OPERATING PRINCIPLES OF TFETS—OFF AND ON-STATE. TFET OPTIMIZATION. IMPACT IONIZATION FIELD-EFFECT TRANSISTORS. NEGATIVE CAPACITANCE FETS. QUANTUM DOT DEVICES (7H) ZERO-DIMENSIONAL ELECTRON SYSTEMS. SEMICONDUCTOR QUANTUM DOT. COULOMB BLOCKADE. TUNNEL JUNCTIONS. SINGLE-ELECTRON TRANSISTOR. MODELING OF SINGLE-ELECTRON TRANSISTORS. SINGLE-ELECTRON TRANSISTOR LOGIC. ELEMENTS OF QUANTUM ELECTRONICS. QUANTUM-DOT CELLULAR AUTOMATA. QUBIT. FABRICATION OF QUANTUM GATES. DEVICES BASED ON TWO-DIMENSIONAL MATERIALS (2H) GRAPHENE FETS. CONTACTS. GRAPHENE NANORIBBON FETS. BILAYER GRAPHENE. TRANSITION METAL DICHALCOGENIDES. RECONFIGURABLE TMDC-FETS WITH TRIPLE-GATE STRUCTURES. VAN DER WAALS HETEROSTRUCTURES. CRYOGENIC ELECTRONICS (2H) MOSFETS AT CRYOGENIC TEMPERATURES. SWITCHING BEHAVIOR OF CRYOGENIC MOSFETS. SUPPRESSION OF BAND-TAILING. OPTIMIZING THE SWITCHING OF CRYOGENIC MOSFETS. SCALABILITY OF CRYOGENIC MOSFETS. DOPANTS IN CRYOGENIC MOSFETS. OPTOELECTRONIC DEVICES (4H) PHOTOCATALYSIS. PHOTOCONDUCTORS. PHOTODIODES. SOLAR CELLS. RADIOMETRIC AND PHOTOMETRIC QUANTITIES. LIGHT-EMITTING DIODES. LASERS. DEVICE FABRICATION TECHNOLOGY (2H) OXIDATION. LITHOGRAPHY. PATTERN TRANSFER-ETCHING. DOPING. DOPANT DIFFUSION. THIN-FILM DEPOSITION. INTERCONNECTS. FABRICATION TECHNIQUES FOR NANOSTRUCTURES. CMOS PROCESS FLOW.

Contents

LECTURES AND LABORATORY (52H):

ENERGY BANDS AND CHARGE CARRIERS AT THERMAL EQUILIBRIUM (5H)
SEMICONDUCTOR MATERIALS. BASIC CRYSTAL STRUCTURES. ENERGY BANDS. DONORS AND ACCEPTORS. DOPING AT NANOSCALE. DEGENERATE DOPING. ALTERNATIVES TO IMPURITY DOPING. FERMI FUNCTION. DENSITY OF STATES. CHARGE CARRIER CONCENTRATION.

CURRENT FLOW (6H)
CLASSICAL TRANSPORT. DRIFT AND DIFFUSION. SCATTERING MECHANISMS. BOLTZMANN TRANSPORT EQUATION. GENERATION AND RECOMBINATION. CONTINUITY EQUATION. TUNNELING. FIELD EMISSION. HIGH-FIELD EFFECTS. QUANTUM TRANSPORT. LANDAUER FORMALISM. MULTIMODE TRANSPORT. QUANTUM CONDUCTANCE. EFFECT OF SCATTERING.

LOW DIMENSIONAL SEMICONDUCTORS (2H)
GRAPHENE AND TWO-DIMENSIONAL COMPOUND SEMICONDUCTORS. NANOWIRES. CARBON NANOTUBES. QUANTUM DOTS. STRUCTURAL PROPERTIES. BAND STRUCTURES. ELECTRICAL AND OPTICAL PROPERTIES. EXCITONS. VAN-DER-WAALS HETEROSTRUCTURES.

HETEROJUNCTIONS (5H)
METAL-SEMICONDUCTOR CONTACTS. SCHOTTKY BARRIER. FERMI LEVEL PINNING. FERMI-LEVEL DEPINNING. CURRENT TRANSPORT PROCESSES. THERMIONIC-EMISSION THEORY. OHMIC CONTACTS. TRANSFER LENGTH OF CONTACTS. HETEROJUNCTIONS. HETEROEPITAXY. ENERGY LEVELS IN HETEROSTRUCTURES. SUPERLATTICES.

MOS STRUCTURE (4H)
METAL-OXIDE-SEMICONDUCTOR CAPACITOR. DEPLETION CAPACITANCE. INTERFACE-STATES CAPACITANCE. DENSITY-OF-STATES OR QUANTUM CAPACITANCE. ACCUMULATION CAPACITANCE. THRESHOLD VOLTAGE. C-V CHARACTERISTICS. QUANTUM EFFECTS ON THE MOS C-V CHARACTERISTICS.

MOS FIELD-EFFECT TRANSISTOR (6H)
OPERATION PRINCIPLES—GRADUAL CHANNEL APPROXIMATION. NANOSCALE TRANSISTORS WITH BALLISTIC TRANSPORT. MOSFETS. TOP-OF-THE-BARRIER MODEL. OFF-STATE. ON-STATE. IMPACT OF SCATTERING. MOSFET PERFORMANCE. ELECTROSTATICS. SCALING AND SHORT-CHANNEL EFFECTS. ULTRATHIN-BODY FIELD-EFFECT TRANSISTORS. DOUBLE-GATE FINFETS. MULTIGATE NANOSHEET AND NANOWIRE FETS. TUNNELING THROUGH THE GATE DIELECTRIC. DIRECT SOURCE-TO-DRAIN TUNNELING.

CMOS CIRCUITS AND MEMORIES (2H)
COMPLEMENTARY MOSFET (CMOS) CIRCUITS. STATIC AND DYNAMIC RANDOM ACCESS MEMORIES (SRAM AND DRAM). NONVOLATILE MEMORY DEVICES. RESISTIVE RANDOM ACCESS MEMORIES (RRAM).

METAL-SOURCE-DRAIN FIELD-EFFECT TRANSISTORS (3H)
OPERATING PRINCIPLES OF SB-MOSFETS. ULTRATHIN-BODY SB-MOSFETS. OUTPUT CHARACTERISTICS. SCHOTTKY-BARRIER LOWERING WITH DOPANT SEGREGATION. TEMPERATURE DEPENDENCE. INTERFACE ENGINEERING WITH DEPINNING LAYERS. RECONFIGURABLE DEVICES. PROGRAM-GATE AT DRAIN VERSUS PROGRAM-GATE AT SOURCE.

STEEP SLOPE TRANSISTORS (2H)
BAND-TO-BAND TUNNEL FIELD-EFFECT TRANSISTORS. OPERATING PRINCIPLES OF TFETS—OFF AND ON-STATE. TFET OPTIMIZATION. IMPACT IONIZATION FIELD-EFFECT TRANSISTORS. NEGATIVE CAPACITANCE FETS.

QUANTUM DOT DEVICES (7H)
ZERO-DIMENSIONAL ELECTRON SYSTEMS. SEMICONDUCTOR QUANTUM DOT. COULOMB BLOCKADE. TUNNEL JUNCTIONS. SINGLE-ELECTRON TRANSISTOR. MODELING OF SINGLE-ELECTRON TRANSISTORS. SINGLE-ELECTRON TRANSISTOR LOGIC. ELEMENTS OF QUANTUM ELECTRONICS. QUANTUM-DOT CELLULAR AUTOMATA. QUBIT. FABRICATION OF QUANTUM GATES.

DEVICES BASED ON TWO-DIMENSIONAL MATERIALS (2H)
GRAPHENE FETS. CONTACTS. GRAPHENE NANORIBBON FETS. BILAYER GRAPHENE. TRANSITION METAL DICHALCOGENIDES. RECONFIGURABLE TMDC-FETS WITH TRIPLE-GATE STRUCTURES. VAN DER WAALS HETEROSTRUCTURES.

CRYOGENIC ELECTRONICS (2H)
MOSFETS AT CRYOGENIC TEMPERATURES. SWITCHING BEHAVIOR OF CRYOGENIC MOSFETS. SUPPRESSION OF BAND-TAILING. OPTIMIZING THE SWITCHING OF CRYOGENIC MOSFETS. SCALABILITY OF CRYOGENIC MOSFETS. DOPANTS IN CRYOGENIC MOSFETS.

OPTOELECTRONIC DEVICES (4H)
PHOTOCATALYSIS. PHOTOCONDUCTORS. PHOTODIODES. SOLAR CELLS. RADIOMETRIC AND PHOTOMETRIC QUANTITIES. LIGHT-EMITTING DIODES. LASERS.

DEVICE FABRICATION TECHNOLOGY (2H)
OXIDATION. LITHOGRAPHY. PATTERN TRANSFER-ETCHING. DOPING. DOPANT DIFFUSION. THIN-FILM DEPOSITION. INTERCONNECTS. FABRICATION TECHNIQUES FOR NANOSTRUCTURES. CMOS PROCESS FLOW.

	Teaching Methods
	THE COURSE INCLUDES THEORETICAL LESSONS AND APPLICATION EXAMPLES. EXERCISES WILL BE PROPOSED TO CONSOLIDATE THE LEARNING OF BASIC CONCEPTS AND TO FAMILIARIZE THE STUDENT WITH THE SITUATIONS IN PLAY. IF OF INTEREST, A PART OF THE LABORATORY DEDICATED TO THE USE OF MEASUREMENT INSTRUMENTS AND TECHNIQUES OPTIMIZED FOR NANODEVICES CAN ALSO BE INCLUDED.

	Verification of learning
	THE VERIFICATION OF LEARNING REQUIRES AN ORAL TEST LASTING ABOUT AN HOUR. THE ORAL EXAM FOCUS ON A SUBSET OF RANDOMLY CHOSEN COURSE TOPICS AND HAS THE PURPOSE OF DEEPENING THE LEVEL OF THEORETICAL KNOWLEDGE, THE AUTONOMY OF ANALYSIS AND JUDGMENT, AS WELL AS THE EXPRESSION ABILITY OF THE STUDENT. THE LEVEL OF ASSESSMENT TAKES INTO ACCOUNT THE EFFICIENCY OF THE METHODS USED, THE COMPLETENESS AND ACCURACY OF THE ANSWERS, AS WELL AS THE CLARITY OF THE PRESENTATION. THE MINIMUM EVALUATION LEVEL (18) IS ASSIGNED WHEN THE STUDENT DEMONSTRATES SUFFICIENT KNOWLEDGE OF THE OPERATION OF THE VARIOUS DEVICES COVERED, BUT PRESENTS SOME INACCURACIES OR INCOMPLETENESS IN THE EXPOSITION OR MATHEMATICAL FORMULATION OF THE DISCUSSED PHENOMENA. THE MAXIMUM LEVEL (30) IS AWARDED WHEN THE STUDENT DEMONSTRATES A COMPLETE AND DEEP KNOWLEDGE OF THE PHYSICS OF THE DEVICES AND IS ABLE TO FORMALIZE IT ANALYTICALLY. THE FINAL MARK, EXPRESSED IN THIRTIETH WITH POSSIBLE HONORS, IS OBTAINED BY TAKING ACCOUNT OF THE ORAL EXAM AND A SMALL PART OF THE ATTENDANCE OF THE COURSE. PRAISE IS AWARDED WHEN THE CANDIDATE DEMONSTRATES SIGNIFICANT MASTERY OF THEORETICAL AND APPLICATIONAL CONTENTS AND SHOWS THE ABILITY TO PRESENT THE TOPICS WITH REMARKABLE LANGUAGE PROPERTY AND INDEPENDENT PROCESSING ABILITY EVEN IN CONTEXTS DIFFERENT FROM THOSE PROPOSED BY THE TEACHER.

Verification of learning

THE VERIFICATION OF LEARNING REQUIRES AN ORAL TEST LASTING ABOUT AN HOUR. THE ORAL EXAM FOCUS ON A SUBSET OF RANDOMLY CHOSEN COURSE TOPICS AND HAS THE PURPOSE OF DEEPENING THE LEVEL OF THEORETICAL KNOWLEDGE, THE AUTONOMY OF ANALYSIS AND JUDGMENT, AS WELL AS THE EXPRESSION ABILITY OF THE STUDENT.
THE LEVEL OF ASSESSMENT TAKES INTO ACCOUNT THE EFFICIENCY OF THE METHODS USED, THE COMPLETENESS AND ACCURACY OF THE ANSWERS, AS WELL AS THE CLARITY OF THE PRESENTATION.
THE MINIMUM EVALUATION LEVEL (18) IS ASSIGNED WHEN THE STUDENT DEMONSTRATES SUFFICIENT KNOWLEDGE OF THE OPERATION OF THE VARIOUS DEVICES COVERED, BUT PRESENTS SOME INACCURACIES OR INCOMPLETENESS IN THE EXPOSITION OR MATHEMATICAL FORMULATION OF THE DISCUSSED PHENOMENA.
THE MAXIMUM LEVEL (30) IS AWARDED WHEN THE STUDENT DEMONSTRATES A COMPLETE AND DEEP KNOWLEDGE OF THE PHYSICS OF THE DEVICES AND IS ABLE TO FORMALIZE IT ANALYTICALLY.
THE FINAL MARK, EXPRESSED IN THIRTIETH WITH POSSIBLE HONORS, IS OBTAINED BY TAKING ACCOUNT OF THE ORAL EXAM AND A SMALL PART OF THE ATTENDANCE OF THE COURSE.
PRAISE IS AWARDED WHEN THE CANDIDATE DEMONSTRATES SIGNIFICANT MASTERY OF THEORETICAL AND APPLICATIONAL CONTENTS AND SHOWS THE ABILITY TO PRESENT THE TOPICS WITH REMARKABLE LANGUAGE PROPERTY AND INDEPENDENT PROCESSING ABILITY EVEN IN CONTEXTS DIFFERENT FROM THOSE PROPOSED BY THE TEACHER.

	Texts
	TEXTBOOKS: J. KNOCH: NANOELECTRONICS, 2A ED, 2024, DE GRUYTER, BERLIN, GERMANY G.W. HANSON: FUNDAMENTAL OF NANOELECTRONICS, 2008, PEARSON EDUCATION, HOBOKEN, NJ 07030, USA M. GRUNDMANN: THE PHYSICS OF SEMICONDUCTORS - AN INTRODUCTION INCLUDING NANOPHYSICS AND APPLICATIONS, FOURTH EDITION, 2022, SPRINGER, SWITZERLAND B.G. PARK, S.W. HUANG, Y.J. PARK: NANOELECTRONIC DEVICES, 2012, JENNY STANFORD PUBLISHING, SINGAPORE M. LUNDSTROM: FUNDAMENTALS OF NANOTRANSISTORS, 2017, WORLD SCIENTIFIC, SINGAPORE S. M. SZE, M.-K. LEE: SEMICONDUCTOR DEVICES: PHYSICS AND TECHNOLOGY, 4TH EDITION, 2021, WILEY V.K. KHANNA: INTRODUCTORY NANOELECTRONICS - PHYSICAL THEORY AND DEVICE ANALYSIS, CRC PRESS, 2021, BOCA RATON

Texts

TEXTBOOKS:
J. KNOCH: NANOELECTRONICS, 2A ED, 2024, DE GRUYTER, BERLIN, GERMANY
G.W. HANSON: FUNDAMENTAL OF NANOELECTRONICS, 2008, PEARSON EDUCATION, HOBOKEN, NJ 07030, USA
M. GRUNDMANN: THE PHYSICS OF SEMICONDUCTORS - AN INTRODUCTION INCLUDING NANOPHYSICS AND APPLICATIONS, FOURTH EDITION, 2022, SPRINGER, SWITZERLAND
B.G. PARK, S.W. HUANG, Y.J. PARK: NANOELECTRONIC DEVICES, 2012, JENNY STANFORD PUBLISHING, SINGAPORE
M. LUNDSTROM: FUNDAMENTALS OF NANOTRANSISTORS, 2017, WORLD SCIENTIFIC, SINGAPORE
S. M. SZE, M.-K. LEE: SEMICONDUCTOR DEVICES: PHYSICS AND TECHNOLOGY, 4TH EDITION, 2021, WILEY
V.K. KHANNA: INTRODUCTORY NANOELECTRONICS - PHYSICAL THEORY AND DEVICE ANALYSIS, CRC PRESS, 2021, BOCA RATON

	More Information
	THE INSTRUCTOR IS AVAILABLE FOR INFORMATION OR DISCUSSIONS ABOUT THE CONTENTS OF THE COURSE AT ANY TIME. E-MAIL: ADIBARTOLOMEO@UNISA.IT

Lessons Timetable

BETA VERSION Data source ESSE3

International Teaching | NANOELECTRONICS